▣ Title : ELECTRO-MECHANICAL

SWITCH TECHNOLOGY BEYOND CMOS

▣ Speaker

: Wook-hyun Kwon(SAMSUNG)

▣ Date

& Time : Friday, November 7 (1:30

~ 3:00pm)

▣ Place

: LG Research Building, Room #101

▣ Host

: Prof. Chang-Ki Baek(T.8893)

▣ Abstract :

Power

density has grown to be the dominant challenge for continued IC technology

scaling. The achievable performance of today’s computational substrates are

limited by power consumption and by the inefficiencies caused by accessing

today’s off-chip switches and memories. This has led to renewed interest in

mechanical computing for ultra-low-power applications. The seminar provides an

overview of recent developments in electrostatic micro-relay design and process

technology, and discusses technology scaling to achieve MEM switches that are

advantageous over CMOS transistors for ultra-low-power digital logic

applications.. Moreover, as a new concept of non-volatile memory technology, a nano-electro-mechanical

(NEM) diode non-volatile memory cell design will be introduced. This design

eliminates the need of a selector device to form a cross-point array, by

leveraging the gap closing actuator. Low-voltage (< 2 V) and high-speed (sub-nanosecond) operation are projected using a calibrated analytical model as well as 3-D FEM simulation. These findings indicate that electro-mechanical diode technology is promising for high density storage beyond the limits of conventional flash memory technology.